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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 3, 2005, Pages 601-605

Athermal annealing of Mg-implanted GaAs

(6) Simonson, J a Qadri, S B b Rao, M V a Fischer, R b Grun, J b Ridgway, M C c

a GEORGE MASON UNIVERSITY (United States)

b NAVAL RESEARCH LABORATORY (United States)

c AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ION IMPLANTATION; LASER PULSES; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; VAPORIZATION; WAVE PROPAGATION; X RAY DIFFRACTION ANALYSIS;

DOPANTS; LASER-PLASMA INTERACTION; LASER-SHOCKED ANNEALING; MECHANICAL WAVE PROPAGATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 21644466422 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2995-1 Document Type: Article

Times cited : (4)

References (8)

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