Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer

IEEE Photonics Technology Letters

Volumn 13, Issue 11, 2001, Pages 1164-1166

  Sheu, J K ^a   Chi, G C ^a   Jou, M J ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

GaN; InGaN; Light emitting diode; Metal organic vapor phase epitax; Multiple quantum well

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

CURRENT-SPREADING LAYERS;

LIGHT EMITTING DIODES;

EID: 0035503618     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.959351     Document Type: Article

References (10)

1. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
2. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices
4. Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectra region using a thick GaP window layer
5. High-efficiency InGaAlP/GaAs visible light-emitting diodes
6. Emission properties of InGaAlP visible light-emitting diodes employing a multiquantum-well active layer
7. AlGaInP compressively strained multi-quantum well light-emitting diodes for polymer fiber applications
8. Light-emitting diode with charge asymmetric resonance tunneling
9. Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode