X-ray diffraction study of InGaN/GaN superlattice interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1839-1843

  Kusakabe, Kazuhide ^a   Ohkawa, Kazuhiro ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

SUPERLATTICE INTERFACES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0141607958     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1589514     Document Type: Conference Paper

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