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Volumn 221, Issue 1-4, 2000, Pages 373-377

MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: Well and barrier thickness dependence

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STIMULATED EMISSION;

EID: 0034510685     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00716-8     Document Type: Article
Times cited : (23)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.