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Volumn 221, Issue 1-4, 2000, Pages 373-377
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MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: Well and barrier thickness dependence
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL LATTICES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
STIMULATED EMISSION;
GALLIUM NITRIDE;
TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0034510685
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00716-8 Document Type: Article |
Times cited : (23)
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References (12)
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