Effects of nonradiative centers on localized excitons in InGaN quantum well structures

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Gotoh, H ^a   Akasaka, T ^a   Tawara, T ^a   Kobayashi, Y ^a   Makimoto, T ^a   Nakano, H ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYPTOGRAPHY; EXCITONS; MOLECULAR STRUCTURE; NANOTECHNOLOGY; PHOTOLUMINESCENCE; RADIATION EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EXCITON LOCALIZATION EFFECTS; INDIUM ACCUMULATION; NONRADIATIVE CENTERS; NONRADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33751570747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2399347     Document Type: Article

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