Observation of dislocation etch pits in GaN epilayers by atomic force microscopy and scanning electron microscopy

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 4, 2007, Pages 473-479

  Gao, Zhiyuan ^a   Hao, Yue ^a   Zhang, Jincheng ^a   Zhang, Jinfeng ^a   Chen, Haifeng ^a   Ni, Jinyu ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Dislocation; GaN; KOH etching; Polarity

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPILAYERS; ETCHING; POTASSIUM HYDROXIDE; SCANNING ELECTRON MICROSCOPY;

ETCH PITS; POLARITY; POTASSIUM HYDROXIDE ETCHING; SCREW DISLOCATION; SILICON DOPED GAN EPILAYER;

GALLIUM NITRIDE;

EID: 34249857749     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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