Crystallization of GaN by HVPE on pressure grown seeds

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1654-1657

  Grzegory, I ^a   Lucznik, B ^a   Bockowski, M ^a   Pastuszka, B ^a   Kamler, G ^a   Nowak, G ^a   Krysko, M ^a   Krukowski, S ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION FREE LAYERS; ELECTROCHEMICAL ETCHING; MECHANICAL POLISHING;

CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTROCHEMISTRY; ETCHING; POLISHING; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33745033596     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565296     Document Type: Article

References (5)

1. I. Grzegory, M. Boćkowski, and S. Porowski, in: Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials, edited by P. Capper (Wiley, 2005), chap. 6, pp. 173-207.
2. C. Skierbiszewski, K. Dybko, W. Knap, J. Łusakowski, M. Siekacz, W. Krupczyński, G. Nowak, M. Boćkowski, Z. Wasilewski, D. Maude, T. Suski, and S. Porowski, Appl. Phys. Lett. 86, 102106 (2005).
3. C. Skierbiszewski, Z. Wasilewski, M. Siekacz, A. Feduniewicz, P. Perlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski, and S. Porowski, Appl. Phys. Lett. 86, 011114 (2005).
4. B. Łucznik, B. Pastuszka, I. Grzegory, M. Boćkowski, G. Kamler, E. Litwin-Staszewska, and S. Porowski, J. Cryst. Growth 281, 38 (2005).
5. G. Kamler, to be published.