High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 429-434

  Paskova, T ^a   Suski, T ^b   Bockowski, M ^b   Paskov, P P ^a   Darakchieva, V ^a   Monemar, B ^a   Tuomisto, F ^c   Saarinen, K ^c   Ashkenov, N ^d   Schubert, M ^d   Roder, C ^e   Hommel, D ^e  

^a LINKÖPING UNIVERSITY   (Sweden)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c AALTO UNIVERSITY   (Finland)

^d UNIVERSITY OF LEIPZIG   (Germany)

^e UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; GALLIUM NITRIDE; HYDRIDES; MORPHOLOGY; PHOTOLUMINESCENCE; POSITRON ANNIHILATION SPECTROSCOPY; RESIDUAL STRESSES; STRESS CONCENTRATION; STRESSES; THIN FILMS; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); OPTICAL QUALITY; SPECTRAL RESOLUTION; VACANCY DEFECTS;

ANNEALING;

EID: 23844478223     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)

1. L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. Liliental-Weber, D.C. Look, and R.J. Molnar, Appl. Phys. Lett. 77, 2695 (2000).
2. J. Jasinski, S. Swider, Z. Liliental-Weber, P. Visconti, K.M. Jones, M.A. Reshchikov, F. Yun, H. Morkoc, S.S. Park, and K.Y. Lee, Appl. Phys. Lett. 78, 2297 (2001).
3. G. Nootz, A. Schulte, L. Chernyak, A. Osinsky, J. Jasinski, M. Benamara, and Z. Liliental-Weber, Appl. Phys. Lett. 80, 1355 (2002).
4. D.C. Look, C.E. Stutz, R.J. Molnar, K. Saarinen, and Z. Liliental-Weber, Solid State Commun. 117, 571 (2001).
5. X.L. Sun, S.H. Goss, L.J. Brillson, D.C. Look, and R.J. Molnar, J. Appl. Phys. 91, 6729 (2002).
6. T. Paskova, P.P. Paskov, V. Darakchieva, E.M. Goldys, U. Sõdervall, E. Valcheva, B. Arnaudov, and B. Monemar, Phys. Stat. Sol. (c) 0, 209 (2002).
7. J. Oila, J. Kivioja, V. Ranski, K. Saarinen, D.C. Look, R.J. Molnar, S.S. Park, S.K. Lee, and J.Y. Han, Appl. Phys. Lett. 82, 3433 (2003).
8. T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki, J. Crystal Growth 128, 384 (1993).
9. F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, and N. Sawaki, Appl. Phys. Lett. 74, 359 (1999).
10. M. Kuball, M. Benyoucef, B. Beaumont, and P. Gibart, J. Appl. Phys. 90, 3656 (2001).
11. V. Darakchieva, T. Paskova, P.P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert, J. Appl. Phys. 97, (2005).
12. S.S. Park, I.W. Park, and S.H. Choh. Proc IWN 2000, IPAP conference Series Cl, 60 (2001).
13. C. Roder, T. Böttcher, D. Hommel, T. Paskova, and B. Monemar Mat. Res. Soc. Symp. Proc. 798 (2004) Y2.11
14. E.V. Etzkorn and R.D. Clarke, J. Appl. Phys. 89, 1025 (2001).
15. T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, I.G. Ivanov, B. Monemar, T. Böttcher, C. Roder, and D. Hommel, J. Electronic Materials 33, 389 (2004).
16. P. Vennéguès, B. Beaumont, V. Bousquet, and P. Gibart, J. Appl. Phys. 87, 4175 (2000).
17. T. Paskova, E. Valcheva, P.P. Paskov, B. Monemar, A.M. Rockowski, R.F. Davis, B. Beaumont, and P. Gibart, Diamond and Related Materials 13, 1125 (2004).
18. K. Saarinen, P. Hautojärvi, and C. Corbel, in Identification of Defects in Semiconductors, edited by M. Stavola (Academic Press, New York, 1998), p. 209.
19. B. Monemar, J. Phys. Condensed Matter 13, 7011 (2001).
20. W.J. Moore, I.A. Freitas, Jr., G.C.B. Braga, R.J. Molnar, S.K. Lee, K.Y. Lee, and I.J. Song, Appl. Phys. Lett. 79, 2570 (2001).
21. K. Saarinen, T. Laine, S. Kuisma, J. Nissilä, P. Hautojärvi, L. Dobrzynski, J. M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. Lett. 79, 3030 (1997).
22. C. Kisielowski, J. Krueger, S. Ruvimov, T. Suski, J.W.III Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, and R.F. Davis, Phys. Rev. B 54, 17745 (1996).
23. P.F. Fewster, X-ray scattering from semiconductors (Imperial College Press, London, 2000).