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Volumn 78, Issue 21, 2001, Pages 3226-3228

Fabrication of GaN suspended microstructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035926963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1364504     Document Type: Article
Times cited : (29)

References (15)
  • 11
    • 0038896853 scopus 로고    scopus 로고
    • note
    • pe. Hence, we believe the electrolyte does not significantly alter the basic open-circuit condition.
  • 12
    • 0040081298 scopus 로고    scopus 로고
    • note
    • Band-bending at the electrolyte interface repels holes and thereby suppresses surface recombination.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.