A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1622-1626

  Keem, Kihyun ^a   Kang, Jeongmin ^a   Yoon, Changjoon ^a   Yeom, Donghyuk ^a   Jeong, Dong Young ^a   Moon, Byung Moo ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

Fabrication; FET; Nanowire; Photolithography; Top gate

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRODES; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; PHOTODETECTORS; PHOTOLITHOGRAPHY; ZINC OXIDE;

I-V MEASUREMENTS; METAL ELECTRODES; TOP-GATE;

NANOWIRES;

EID: 34247555440     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.258     Document Type: Article

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