Gate-controlled ZnO nanowires for field-emission device application

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 147-151

  Li, Seu Yi ^a   Lee, Chia Ying ^a   Lin, Pang ^a   Tseng, Tseung Yuen ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON BEAMS; FIELD EMISSION DISPLAYS; GATES (TRANSISTOR);

FIELD-EMISSION DEVICE; FLAT DISPLAY ARRAY; NANOWIRE; SIDE-GATE CONTROL;

NANOSTRUCTURED MATERIALS;

EID: 31544436072     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2151217     Document Type: Article

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