Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1771-1776

  Brown, Terence ^a   Brown, April ^a   May, Gary ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION EXCHANGE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

ABSORPTION MASS SPECTROMETRY; ANION EXCHANGE; INTERFACE COMPOSITION; STRUCTURAL PROPERTIES; X RAY SIMULATION;

HETEROJUNCTIONS;

EID: 0035982619     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1491988     Document Type: Conference Paper

References (13)