Direct evidence for the β-hydride elimination mechanism in the decomposition of triethylgallium on GaAs(100)

Surface Science

Volumn 396, Issue 1-3, 1998, Pages 260-265

  Wong, K C ^a   McEllistrem, M T ^a   McBurnett, B G ^b   Culp, R D ^b   Cowley, A H ^a   Ekerdt, J G ^a  

^a The University of Texas at Austin   (United States)

^b University of Texas at Austin   (United States)

Author keywords

Chemisorption; Deuterium; Gallium arsenide; Isotopic exchange traces; Low index single crystal surfaces; Models of surface chemical reactions; Semiconducting surfaces; Solid gas interfaces; Thermal desorption spectroscopy; Triethylgallium

Indexed keywords

ADSORPTION; CHARGE TRANSFER; CHEMICAL BONDS; DECOMPOSITION; DEUTERIUM; GALLIUM COMPOUNDS; HYDRIDES; INTERFACES (MATERIALS); SINGLE CRYSTALS; SURFACES; TEMPERATURE PROGRAMMED DESORPTION;

DISSOCIATIVE ADSORPTION; HYDRIDE ELIMINATION; SURFACE CHEMICAL REACTION; TRIETHYLGALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031649454     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00674-2     Document Type: Article

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