In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 78-83

  Pristovsek, M ^a,b   Zorn, M ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Growth models; A1. Reflection anisotropy spectroscopy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ADSORPTION; ANISOTROPY; DECOMPOSITION; HIGH TEMPERATURE EFFECTS; PARTIAL PRESSURE; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; SURFACE TREATMENT; SURFACES; THERMAL EFFECTS;

GROWTH MODELS; REFLECTION ANISOTROPY SPECTROSCOPY (RAS);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0842286896     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.044     Document Type: Article

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