Reconstructions of MOVPE-prepared group-V-rich GaAsSb(100) surfaces

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 694-699

  Kollonitsch, Z ^a   Moller K ^a   Willig, F ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

A1. Low energy electron diffraction; A1. Reflectance difference spectroscopy; A1. Surface reconstruction; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting ternary compounds

Indexed keywords

ANISOTROPY; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OXIDATION; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SPECTROSCOPIC ANALYSIS; SURFACE PHENOMENA; SURFACE ROUGHNESS; SURFACES; ULTRAHIGH VACUUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANTIMONIDES; BINARY COMPOUNDS; REFLECTANCE DIFFERENCE SPECTROSCOPY; SEMICONDUCTING TERNARY COMPOUNDS; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 9944232488     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.064     Document Type: Conference Paper

References (21)

1. M. Dvorak, C. Bolognesi, O. Pitts, S. Watkins, IEEE Electron Dev. Lett. 22 (8) (2001) 361.
2. F. Genty, G. Almuneau, L. Chusseau, G. Boissier, J.-P. Malzac, P. Salet, J. Jacquet, Electron. Lett. 33 (2) (1997) 140.
3. J. Zolper, J. Klem, T. Plut, C. Tigges, in: First WCPEC, Hawaii, 1994, p. 1843.
4. O.J. Pitts, S.P. Watkins, C.X. Wang, V. Fink, K.L. Kavanagh, J. Crystal Growth 254 (1-2) (2003) 28.
5. J. Moison, C. Guille, F. Houzay, F. Barthe, M.V. Rompay, Phys. Rev. B 40 (9) (1989) 6149.
6. Q. Xie, J.E.V. Nostrand, J.L. Brown, C.E. Stutz, J. Appl. Phys. 86 (1) (1999) 329.
7. S. Froyen, A. Zunger, Phys. Rev. B 53 (8) (1996) 4570.
8. Y. Itani, H. Asahi, T. Kaneko, Y. Okuno, S. Gonda, J. Appl. Phys. 73 (3) (1993) 1161.
9. C.-A. Chang, R. Ludeke, L. Chang, L. Esaki, Appl. Phys. Lett. 31 (11) (1977) 759.
10. I. Murgatroyd, A. Norman, G. Booker, J. Appl. Phys. 67 (5) (1990) 2310.
11. O. Pitts, S. Watkins, C. Wang, J. Crystal Growth 248 (2003) 249.
12. T. Hannappel, F. Willig, German Patent DE 19837851, Germany, 1999.
13. T. Hannappel, S. Visbeck, L. Töben, F. Willig, Rev. Sci. Instrum. 75 (5) (2004) 1297.
14. J.-T. Zettler, Prog. Crystal Growth Charact. 35 (1997) 27.
15. S. Zhang, A. Zunger, Phys. Rev. B 53 (3) (1996) 1343.
16. Z. Kollonitsch, K. Möller, H.J. Schimper, C. Giesen, M. Heuken, F. Willig, T. Hannappel, J. Crystal Growth 261 (2-3) (2004) 289.
17. G. Franklin, D. Rich, A. Samsavar, E. Hirschhorn, F. Leibsle, T. Miller, T.-C. Chiang, Phys. Rev. B 41 (18) (1990) 12619.
18. I. Kamiya, D. Aspnes, H. Tanaka, L. Florez, J. Harbison, R. Bhat, Phys. Rev. Lett. 68 (5) (1992) 627.
19. W. Schmidt, F. Bechstedt, K. Fleischer, C. Cobet, N. Esser, W. Richter, J. Bernholc, G. Onida, Phys. Stat. Sol. (a) 188 (4) (2001) 1401.
20. I. Kamiya, D. Aspnes, L. Florez, J. Harbison, Phys. Rev. B 46 (24) (1992) 15894.
21. D. Serries, M. Peter, N. Herres, K. Winkler, J. Wagner, J. Appl. Phys. 87 (12) (2000) 8522.