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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 838-843

Sb-surface segregation and the control of compositional abruptness at the GaAsSb/GaAs interface

(2) Kaspi, Ron a Evans, Keith R a,b

a AIR FORCE RESEARCH LABORATORY (United States)

b Semiconductor Laser International (United States)

Author keywords

Interfacial broadening; Mass spectroscopy; Surface segregation

Indexed keywords

ANTIMONY; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE STRUCTURE; THERMAL EFFECTS;

CHEMICAL FLASHOFF; LINE OF SIGHT MASS SPECTROMETRY; SURFACE SEGREGATION;

HETEROJUNCTIONS;

EID: 0031145702 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00948-7 Document Type: Article

Times cited : (86)

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