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Volumn 409, Issue 2, 1998, Pages 372-383

Reflectance-difference spectroscopy of adsorbate-covered GaAs(100) surfaces: A combined surface science and in-situ OMVPE study

(2) Creighton, J R a Baucom, K C a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

Auger electron spectroscopy (AES); Chemical vapor deposition; Chemisorption; Gallium arsenide; Low energy electron diffraction (LEED); Reflection spectroscopy; Thermal desorption; Thermal desorption spectroscopy; Trimethyl gallium

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

ATOMIC LAYER EPITAXY; REFLECTANCE DIFFERENCE SPECTROSCOPY; THERMAL DESORPTION SPECTROSCOPY; TRIMETHYL GALLIUM;

SURFACES;

EID: 0032114763 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00291-X Document Type: Article

Times cited : (37)

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