Highly reliable nitride-based LEDs with internal ESD protection diodes

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 3, 2006, Pages 442-446

  Chang, S J ^a   Shen, C F ^a   Shei, S C ^b   Chuang, R W ^a   Chang, C S ^c   Chen, W S ^a   Ko, T K ^a   Sheu, J K ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c Epitech Technology Corporation   (Taiwan)

Author keywords

Current spreading; Electrostatic discharge (ESD); GaN; Light emitting diode (LED); Protection diode

Indexed keywords

DIODES; ELECTRIC DISCHARGES; ELECTROSTATIC DEVICES; NITRIDES; THERMAL EFFECTS;

CURRENT SPREADING; ELECTROSTATIC-DISCHARGE (ESD); PROTECTION DIODES;

LIGHT EMITTING DIODES;

EID: 33750831334     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.881454     Document Type: Article

References (18)

1. J. I. Pankove, "Perspective on gallium nitride," in Proc. Mater. Res. Soc. Symp., 1990, vol. 162, pp. 515-519.
2. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures," Jpn. J. Appl. Phys., vol. 34, no. 7A, pp. L797-L799, 1995.
3. I. Akasaki and H. Amano, "Crystal growth and conductivity control of group III-nitride semiconductors and their applications to short wavelength light emitters," Jpn. J. Appl. Phys., vol. 36, no. 9A, pp. 5393-5408, Sep. 1997.
4. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar./Apr. 2002.
5. E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science, vol. 308, no. 5726, pp. 1274-1278, May 2005.
6. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul./Aug. 2002.
7. T. Inoue, "Light-Emitting Device," (in Japanese), Japanese Patent, H11-040 848, Dec. 2,1999.
8. S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu, and S. C. Chen, "Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes," IEEE Electron Dev. Lett., vol. 24, no. 3, pp. 129-131, Mar. 2003.
9. G. Meneghesso, S. Podda, and M. Vanzi, "Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs," Microelectron. Reliab., vol. 41, no. 9/10, pp. 1609-1614, Sep./Oct. 2001.
10. Y. K. Su, S. J. Chang, S. C. Wei, S. M. Chen, and W. L. Li, "ESD engineering of nitride-based LEDs," IEEE Trans. Device Mater. Rel., vol. 5, no. 2, pp. 277-281, Jun. 2005.
11. 0.88N/GaN superlattice structures," IEEE Trans. Electron. Dev., vol. 51, no. 10, pp. 1743-1746, Oct. 2004.
12. H. S. Kim, S. J. Park, H. S. Hwang, and N. M. Park, "Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs," Appl. Phys. Lett., vol. 81, no. 7, pp. 1326-1328, Aug. 2002.
13. X. Guo and E. F. Schubert, "Current crowding in GaN/InGaN light emitting diodes on insulating substrates," J. Appl. Phys., vol. 90, no. 8, pp. 4191-4195, Oct. 2001.
14. S. J. Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen, and W. L. Li, "Nitride-based LEDs with MQW active regions grown by different temperature profiles," IEEE Photon. Technol. Lett., vol. 17, no. 9, pp. 1806-1808, Sep. 2005.
15. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, "Nitride-based flip-chip ITO LEDs," IEEE Trans. Adv. Packag., vol. 28, no. 2, pp. 273-277, May 2005.
16. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, and C. T. Lee, "Nitride-based LEDs with 800°C-grown p-AlInGaN/GaN double cap layers," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1447-1449, Jun. 2004.
17. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, "Highly reliable nitride based LEDs with SPS+ITO upper contacts," IEEE J. Quantum Electron., vol. 39, no. 11, pp. 1439-1443, Nov. 2003.
18. A. Ebong, S. Arthur, E. Downey, X. A. Cao, S. LeBoeuf, and D. W. Merfeld, "Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading," Solid State Electron., vol. 47, no. 10, pp. 1817-1823, Oct. 2003.