-
1
-
-
0029779805
-
"InGaN-based mutiquantum well structure laser diodes"
-
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamade, H. Kiyoko, and Y. Sugimoto, "InGaN-based mutiquantum well structure laser diodes," Jpn. J. Appl. Phys., vol. 35, pt. 2, pp. L74-L76, 1996.
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
, Issue.2
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.3
Iwasa, N.4
Yamade, T.5
Kiyoko, H.6
Sugimoto, Y.7
-
2
-
-
0036493177
-
"InGaN-GaN multiquantum well blue and green light emitting diodes"
-
Mar.-Apr
-
S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN-GaN multiquantum well blue and green light emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar.-Apr. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.2
, pp. 278-283
-
-
Chang, S.J.1
Lai, W.C.2
Su, Y.K.3
Chen, J.F.4
Liu, C.H.5
Liaw, U.H.6
-
3
-
-
19744374735
-
"Solid-state light sources getting smart"
-
E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science, vol. 308, pp. 1274-1278, 2005.
-
(2005)
Science
, vol.308
, pp. 1274-1278
-
-
Schubert, E.F.1
Kim, J.K.2
-
4
-
-
0038311836
-
"Improved light-output and electrical performance of InGaN-based, light-emitting diode by micro-roughening of the p-GaN surface"
-
C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, "Improved light-output and electrical performance of InGaN-based, light-emitting diode by micro-roughening of the p-GaN surface," J. Appl. Phys., vol. 93, pp. 9383-9385, 2003.
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 9383-9385
-
-
Huh, C.1
Lee, K.S.2
Kang, E.J.3
Park, S.J.4
-
5
-
-
0034227811
-
"40% efficient thin film surface textured light emitting diodes by optimization of natural lithography"
-
Jul
-
R. Windisch, B. Dutta, M. Kuijk, A. Knobloch, S. Meinlschmidt, S. Schoberth, P. Kiesel, G. Borghs, G. H. Dohler, and P. Heremans, "40% efficient thin film surface textured light emitting diodes by optimization of natural lithography," IEEE Trans. Electron. Dev., vol. 47, no. 7, pp. 1492-1498, Jul. 2000.
-
(2000)
IEEE Trans. Electron. Dev.
, vol.47
, Issue.7
, pp. 1492-1498
-
-
Windisch, R.1
Dutta, B.2
Kuijk, M.3
Knobloch, A.4
Meinlschmidt, S.5
Schoberth, S.6
Kiesel, P.7
Borghs, G.8
Dohler, G.H.9
Heremans, P.10
-
6
-
-
1542315187
-
"Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening"
-
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol. 84, pp. 855-857, 2004.
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 855-857
-
-
Fujii, T.1
Gao, Y.2
Sharma, R.3
Hu, E.L.4
DenBaars, S.P.5
Nakamura, S.6
-
7
-
-
23844538076
-
"InGaN-GaN MQW LEDs with Si treatment"
-
Aug
-
Y. P. Hsu, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo, and C. S. Chang, "InGaN-GaN MQW LEDs with Si treatment," IEEE Photon. Technol. Lett., vol. 17, no. 8, pp. 1620-1622, Aug. 2005.
-
(2005)
IEEE Photon. Technol. Lett.
, vol.17
, Issue.8
, pp. 1620-1622
-
-
Hsu, Y.P.1
Chang, S.J.2
Su, Y.K.3
Chen, S.C.4
Tsai, J.M.5
Lai, W.C.6
Kuo, C.H.7
Chang, C.S.8
-
8
-
-
0000869692
-
"InGaN/GaN quantum well interconnected micro-disk light emitting diodes"
-
S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected micro-disk light emitting diodes," Appl. Phys. Lett., vol. 77, pp. 3236-3238, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 3236-3238
-
-
Jin, S.X.1
Li, J.2
Lin, J.Y.3
Jiang, H.X.4
-
9
-
-
1642633876
-
"Nitride-based LEDs with textured side-walls"
-
Mar
-
C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke, and H. M. Lo, "Nitride-based LEDs with textured side-walls," IEEE Photon. Tech. Lett., vol. 16, no. 3, pp. 750-752, Mar. 2004.
-
(2004)
IEEE Photon. Tech. Lett.
, vol.16
, Issue.3
, pp. 750-752
-
-
Chang, C.S.1
Chang, J.2
Su, Y.K.3
Lee, C.T.4
Lin, Y.C.5
Lai, W.C.6
Shei, S.C.7
Ke, J.C.8
Lo, H.M.9
-
10
-
-
26844474296
-
"Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall"
-
Oct
-
C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, "Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall," IEEE Photon. Tech. Lett., vol. 17, no. 10, pp. 2038-2040, Oct. 2005.
-
(2005)
IEEE Photon. Tech. Lett.
, vol.17
, Issue.10
, pp. 2038-2040
-
-
Lin, C.F.1
Yang, Z.J.2
Zheng, J.H.3
Dai, J.J.4
-
11
-
-
0032607399
-
"Light-emitting diodes with 31% external quantum efficiency by out-coupling of lateral waveguide modes"
-
R. Windisch, P. Heremans, A. Knobloch, P. Kiesel, G. H. Dohler, B. Dutta, and G. Borghs, "Light-emitting diodes with 31% external quantum efficiency by out-coupling of lateral waveguide modes," Appl. Phys. Lett., vol. 74, pp. 2256-2258, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2256-2258
-
-
Windisch, R.1
Heremans, P.2
Knobloch, A.3
Kiesel, P.4
Dohler, G.H.5
Dutta, B.6
Borghs, G.7
-
12
-
-
0036661965
-
"400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes"
-
Jul.-Aug
-
S. J. Chang, C. H. Kuo, Y. K. Su, L. W.Wu, J. K. Sheu, T. C.Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul.-Aug. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.4
, pp. 744-748
-
-
Chang, S.J.1
Kuo, C.H.2
Su, Y.K.3
Wu, L.W.4
Sheu, J.K.5
Wen, T.C.6
Lai, W.C.7
Chen, J.F.8
Tsai, J.M.9
-
13
-
-
20444384372
-
"Nitride-based flip-chip ITO LEDs"
-
May
-
S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, "Nitride-based flip-chip ITO LEDs," IEEE Trans. Adv. Packag., vol. 28, no. 2, pp. 273-277, May 2005.
-
(2005)
IEEE Trans. Adv. Packag.
, vol.28
, Issue.2
, pp. 273-277
-
-
Chang, S.J.1
Chang, C.S.2
Su, Y.K.3
Lee, C.T.4
Chen, W.S.5
Shen, C.F.6
Hsu, Y.P.7
Shei, S.C.8
Lo, H.M.9
-
14
-
-
0242696158
-
"Highly reliable nitride based LEDs with SPS + ITO upper contacts"
-
Nov
-
S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, "Highly reliable nitride based LEDs with SPS + ITO upper contacts," IEEE J. Quantum Electron., vol. 39, no. 11, pp. 1439-1443, Nov. 2003.
-
(2003)
IEEE J. Quantum Electron.
, vol.39
, Issue.11
, pp. 1439-1443
-
-
Chang, S.J.1
Chang, C.S.2
Su, Y.K.3
Chuang, R.W.4
Lin, Y.C.5
Shei, S.C.6
Lo, H.M.7
Lin, H.Y.8
Ke, J.C.9
-
15
-
-
33746623964
-
"Nitride-based LEDs with nano scale textured sidewalls using nature lithography"
-
H. W. Huang, H. C. Kuo, J. T. Chu, C. F. Lai, C. C. Kao, T. C. Lu, S. C. Wang, R. J. Tsai, C. C. Yu, and C. F. Lin, "Nitride-based LEDs with nano scale textured sidewalls using nature lithography," Nanotechnol., vol. 17, pp. 2998-3001, 2006.
-
(2006)
Nanotechnol.
, vol.17
, pp. 2998-3001
-
-
Huang, H.W.1
Kuo, H.C.2
Chu, J.T.3
Lai, C.F.4
Kao, C.C.5
Lu, T.C.6
Wang, S.C.7
Tsai, R.J.8
Yu, C.C.9
Lin, C.F.10
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