Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization

IEEE/OSA Journal of Display Technology

Volumn 2, Issue 3, 2006, Pages 265-273

  Meng, Zhiguo ^b,c   Zhao, Shuyun ^b,c   Wu, Chunya ^b,c   Zhang, Bo ^b   Wong, Man ^a,b   Kwok, Hoi Sing ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c NANKAI UNIVERSITY   (China)

Author keywords

Metal induced crystallization (MIC); Nickel gettering; Polycrystalline silicon (poly Si); Thin film transistors (TFTs)

Indexed keywords

CURRENT DISTRIBUTION; GATE-INDUCED DRAIN LEAKAGE CURRENT (GIDL); METAL-INDUCED CRYSTALLIZATION (MIC); NICKEL GETTERING;

CARRIER MOBILITY; CRYSTALLIZATION; FIELD EFFECT TRANSISTORS; GLASS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; POLYSILICON;

THIN FILM TRANSISTORS;

EID: 33748302978     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2006.878769     Document Type: Article

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