Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 1081-1087

  Angelis, C T ^a   Dimitriadis, C A ^a   Farmakis, F V ^b   Brini, J ^b   Kamarinos, G ^b   Miyasaka, M ^c   Stoemenos, I ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b Grenoble INP Phelma   (France)

^c SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

EXCIMER LASER ANNEALING (ELA); SOLID PHASE CRYSTALLIZATION (SPC);

THIN FILM TRANSISTORS;

EID: 0033727760     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00314-7     Document Type: Article

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