Bottom-gate poly-Si TFTs for AMOLED backplane

Digest of Technical Papers - SID International Symposium

Volumn 37, Issue 1, 2006, Pages 262-265

  Oh, Jae Hwan ^a   Kim, Se Hwan ^a   Choi, Jae Won ^a   Kang, Dong Han ^a   Lee, Eun Young ^a   Hur, Ji Ho ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; ORGANIC LIGHT EMITTING DIODES (OLED); POLYSILICON;

AGATE SWING; BACKPLANES; FIELD-EFFECT MOBILITY; GATE INSULATORS;

THIN FILM TRANSISTORS;

EID: 34147166867     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2433473     Document Type: Conference Paper

References (9)

1. Y. Matsueda, S. Inoue and T. Shimoda, Digest of Tech. papers AM-LCD'01 TS-3, 77 (2001).
2. C. Hayzelden, J. L. Batstone, and R. C. Cammarata, Appl. Phys. Lett. 60, 225 (1992).
3. Y. Hirakata, M. Sakakura, S. Eguchi, Y. Shionoiri, S. Yamazaki, H. Washio, Y. Kubota, N. Makaita, and M. Hilikigawa, SID'00 Digest 1014 (2000).
4. M. Wang, Z. Meog, and M. Wong, IEEE Trans. Electron Devices 47, 2061 (2000).
5. J. H. Oh, E. H. Kim, S. K. Kim, J. H. Cheon, Y. D. Son and J. Jang, Appl. Phys. Lett. 87, 231120 (2005).
6. M. J. Powell, S. C. Deane, I. D. French, J. R. Hughes, and W. I. Milne, Philos. Mag B63, 325 (1991).
7. N. Sano, M. Sekiya, M. Hara, A. Kohno and T. Sameshima, Appl. Phys. Lett. 66, 2107 (1995).
8. T. Tsukada, Gordon and Breach Science, pp 67-68, (1996).
9. J. K. Chung. J. H. Ahr, S. H. Won, and J. Jang, J. Kor. Phys. Soc. 45, S1 (2004).