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Volumn 38, Issue 1-2, 2007, Pages 85-88

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

Author keywords

High k dielectric; Memory devices; Metallic; Nanocrystals; Nanoparticles

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; GATES (TRANSISTOR); GOLD; NANOPARTICLES; SELF ASSEMBLY;

EID: 34147176588     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.12.024     Document Type: Article
Times cited : (16)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.