Microcrystalline GaN film grown on Si(1 0 0) and its application to MSM photodiode

Materials Chemistry and Physics

Volumn 84, Issue 2-3, 2004, Pages 369-374

  Hassan, Z ^a   Lee, Y C ^a   Yam, F K ^a   Abdullah, M J ^a   Ibrahim, K ^a   Kordesch, M E ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b OHIO UNIVERSITY   (United States)

Author keywords

AFM; Electronic characterization; Nitride semiconductors; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; CYCLOTRON RESONANCE; FILM GROWTH; PHOTODIODES; SEMICONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS;

ELECTRONIC CHARACTERIZATION; NITRIDE SEMICONDUCTORS;

GALLIUM NITRIDE;

EID: 1342347335     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2003.11.036     Document Type: Article

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