-
1
-
-
0024870484
-
"Future trends for TFT integrated circuits on glass substrates"
-
H. Oshima and S. Morozumi, "Future trends for TFT integrated circuits on glass substrates," in IEDM Tech. Dig., 1989, pp. 157-160.
-
(1989)
IEDM Tech. Dig.
, pp. 157-160
-
-
Oshima, H.1
Morozumi, S.2
-
2
-
-
0031139624
-
"The flowering of flat displays"
-
May
-
K. Werner, "The flowering of flat displays," IEEE Spectr., vol. 34, no. 5, pp. 40-49, May 1997.
-
(1997)
IEEE Spectr.
, vol.34
, Issue.5
, pp. 40-49
-
-
Werner, K.1
-
3
-
-
84886448152
-
"A simple polysilicon TFT technology for display systems on glass"
-
in Dec
-
A. K. P. Kumar and J. K. O. Sin, "A simple polysilicon TFT technology for display systems on glass," in IEDM Tech. Dig., Dec. 1997, pp. 515-518.
-
(1997)
IEDM Tech. Dig.
, pp. 515-518
-
-
Kumar, A.K.P.1
Sin, J.K.O.2
-
4
-
-
0033882049
-
"High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications"
-
Feb
-
Z. Meng, M. Wang, and M. Wong, "High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 404-409, Feb. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.2
, pp. 404-409
-
-
Meng, Z.1
Wang, M.2
Wong, M.3
-
5
-
-
4043137371
-
"Characteristics of high-K spacer offset-gated polysilicon TFTs"
-
Aug
-
Z. Xiong, H. Liu, C. Zhu, and J. K. O. Sin, "Characteristics of high-K spacer offset-gated polysilicon TFTs," IEEE Trans. Electron Devices, vol. 51, no. 8, pp. 1303-1308, Aug. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.8
, pp. 1303-1308
-
-
Xiong, Z.1
Liu, H.2
Zhu, C.3
Sin, J.K.O.4
-
6
-
-
33645474373
-
"Short-channel metal-gate TFTs with modified Schottky-barrier source/drain"
-
Jan
-
C.-F. Huang and B.-Y. Tsui, "Short-channel metal-gate TFTs with modified Schottky-barrier source/drain," IEEE Electron Device Lett., vol. 27, no. 1, pp. 43-45, Jan. 2006.
-
(2006)
IEEE Electron Device Lett.
, vol.27
, Issue.1
, pp. 43-45
-
-
Huang, C.-F.1
Tsui, B.-Y.2
-
7
-
-
0033729015
-
"A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell"
-
Jun
-
J.-H. Oh, H.-J. Chung, N.-I. Lee, and C.-H. Han, "A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell," IEEE Electron Device Lett., vol. 21, no. 6, pp. 304-306, Jun. 2000.
-
(2000)
IEEE Electron Device Lett.
, vol.21
, Issue.6
, pp. 304-306
-
-
Oh, J.-H.1
Chung, H.-J.2
Lee, N.-I.3
Han, C.-H.4
-
8
-
-
0028486089
-
"A simple EEPROM cell using twin polysilicon thin film transistors"
-
Aug
-
M. Cao, T. Zhao, K. C. Saraswat, and J. D. Plummer, "A simple EEPROM cell using twin polysilicon thin film transistors," IEEE Electron Device Lett., vol. 15, no. 8, pp. 304-306, Aug. 1994.
-
(1994)
IEEE Electron Device Lett.
, vol.15
, Issue.8
, pp. 304-306
-
-
Cao, M.1
Zhao, T.2
Saraswat, K.C.3
Plummer, J.D.4
-
9
-
-
0032271794
-
"Improved stability of polysilicon thin-film transistors under self-heating and high endurance EEPROM cells for systems-on-panel"
-
J.-W. Lee, N.-I. Lee, H.-J. Chung, and C.-H. Han, "Improved stability of polysilicon thin-film transistors under self-heating and high endurance EEPROM cells for systems-on-panel," in IEDM Tech. Dig., 1998, pp. 265-268.
-
(1998)
IEDM Tech. Dig.
, pp. 265-268
-
-
Lee, J.-W.1
Lee, N.-I.2
Chung, H.-J.3
Han, C.-H.4
-
10
-
-
0002796231
-
2O-plasma oxide"
-
Jan
-
2O-plasma oxide," IEEE Electron Device Lett., vol. 20, no. 1, pp. 15-17, Jan. 1999.
-
(1999)
IEEE Electron Device Lett.
, vol.20
, Issue.1
, pp. 15-17
-
-
Lee, N.-I.1
Lee, J.-W.2
Kim, H.-S.3
Han, C.-H.4
-
11
-
-
0141426842
-
"3D TFT-SONOS memory cell for ultra-high density file storage applications"
-
A. J. Walker, S. Nallamothu, E.-H. Chen, M. Mahajani, S. Brad Herner, M. Clack, J. M. Cleeves, S. Vance Dunton, V. L. Eckert, J. Gu, S. Hu, J. Knall, M. Konevecki, C. Petti, S. Radigan, U. Raghuram, J. Vienna, and M. A. Vyvoda, "3D TFT-SONOS memory cell for ultra-high density file storage applications," in Proc. VLSI Symp. Tech. Dig. Tech. Papers, 2003, pp. 29-30.
-
(2003)
Proc. VLSI Symp. Tech. Dig. Tech. Papers
, pp. 29-30
-
-
Walker, A.J.1
Nallamothu, S.2
Chen, E.-H.3
Mahajani, M.4
Brad Herner, S.5
Clack, M.6
Cleeves, J.M.7
Vance Dunton, S.8
Eckert, V.L.9
Gu, J.10
Hu, S.11
Knall, J.12
Konevecki, M.13
Petti, C.14
Radigan, S.15
Raghuram, U.16
Vienna, J.17
Vyvoda, M.A.18
-
12
-
-
0041379612
-
"Application of metastable phase diagrams to silicate thin films for alternative gate dielectrics"
-
Jun
-
S. Stemmer, Z. Chen, C. G. Levi, P. S. Lysaght, B. Foran, J. A. Gisby, and J. R. Taylor, "Application of metastable phase diagrams to silicate thin films for alternative gate dielectrics," Jpn. J. Appl. Phys., vol. 42, no. 6A, pp. 3593-3597, Jun. 2003.
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
, Issue.6 A
, pp. 3593-3597
-
-
Stemmer, S.1
Chen, Z.2
Levi, C.G.3
Lysaght, P.S.4
Foran, B.5
Gisby, J.A.6
Taylor, J.R.7
-
13
-
-
0742284430
-
"Inversion electron mobility affected by phase separation in high-permittivity gate dielectrics"
-
Dec
-
S.-I. Saito, Y. Matsui, K. Torii, Y. Shimamoto, M. Hiratani, and S. Kimura, "Inversion electron mobility affected by phase separation in high-permittivity gate dielectrics," Jpn. J. Appl. Phys., vol. 42, no. 12A, pp. L1425-L1428, Dec. 2003.
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
, Issue.12 A
-
-
Saito, S.-I.1
Matsui, Y.2
Torii, K.3
Shimamoto, Y.4
Hiratani, M.5
Kimura, S.6
-
14
-
-
21644484957
-
"High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation"
-
Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, T. H. Ng, and B. J. Cho, "High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation," in IEDM Tech. Dig., 2004, pp. 889-892.
-
(2004)
IEDM Tech. Dig.
, pp. 889-892
-
-
Tan, Y.N.1
Chim, W.K.2
Choi, W.K.3
Joo, M.S.4
Ng, T.H.5
Cho, B.J.6
-
15
-
-
0036477562
-
"Current transport in metal/hafnium oxide/silicon structure"
-
Feb
-
W. J. Zhu, T.-P. Ma, T. Tamagawa, J. Kim, and Y. Di, "Current transport in metal/hafnium oxide/silicon structure," IEEE Electron Device Lett., vol. 23, no. 2, pp. 97-99, Feb. 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, Issue.2
, pp. 97-99
-
-
Zhu, W.J.1
Ma, T.-P.2
Tamagawa, T.3
Kim, J.4
Di, Y.5
-
16
-
-
0032628464
-
"Experimental and theoretical investigation of nonvolatile memory data-retention"
-
Jul
-
B. De Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold, F. Mondond, B. Guillaumot, and P. Candelier, "Experimental and theoretical investigation of nonvolatile memory data-retention," IEEE Trans. Electron Devices, vol. 46, no. 7, pp. 1518-1524, Jul. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, Issue.7
, pp. 1518-1524
-
-
De Salvo, B.1
Ghibaudo, G.2
Pananakakis, G.3
Reimbold, G.4
Mondond, F.5
Guillaumot, B.6
Candelier, P.7
-
17
-
-
0034315780
-
"NROM: A novel localized trapping, 2-Bit nonvolatile memory cell"
-
Nov
-
B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, "NROM: A novel localized trapping, 2-Bit nonvolatile memory cell," IEEE Electron Device Lett., vol. 21, no. 11, pp. 543-545, Nov. 2000.
-
(2000)
IEEE Electron Device Lett.
, vol.21
, Issue.11
, pp. 543-545
-
-
Eitan, B.1
Pavan, P.2
Bloom, I.3
Aloni, E.4
Frommer, A.5
Finzi, D.6
-
18
-
-
0033732342
-
"A new data retention mechanism after endurance stress on Flash memory"
-
H. Kameyama, Y. Okuyama, S. Kamohara, K. Kubota, H. Kume, K. Okuyama, Y. Manabe, A. Nozoe, H. Uchida, M. Hidaka, and K. Ogura, "A new data retention mechanism after endurance stress on Flash memory," in Proc. Reliab. Phys. Symp., 2000, pp. 194-199.
-
(2000)
Proc. Reliab. Phys. Symp.
, pp. 194-199
-
-
Kameyama, H.1
Okuyama, Y.2
Kamohara, S.3
Kubota, K.4
Kume, H.5
Okuyama, K.6
Manabe, Y.7
Nozoe, A.8
Uchida, H.9
Hidaka, M.10
Ogura, K.11
-
19
-
-
84949750269
-
"A new data retention mechanism after endurance stress on Flash memory"
-
W. H. Lee, D.-K. Lee, Y.-M. Park, K.-S. Kim, K.-O. Ahn, and K.-D. Suh, "A new data retention mechanism after endurance stress on Flash memory," in Proc. Reliab. Phys. Symp., 2001, pp. 57-60.
-
(2001)
Proc. Reliab. Phys. Symp.
, pp. 57-60
-
-
Lee, W.H.1
Lee, D.-K.2
Park, Y.-M.3
Kim, K.-S.4
Ahn, K.-O.5
Suh, K.-D.6
-
20
-
-
21644477399
-
2 nanocrystal memory using spinodal phase separation of hafnium silicate"
-
2 nanocrystal memory using spinodal phase separation of hafnium silicate," in IEDM Tech. Dig., 2004, pp. 1080-1082.
-
(2004)
IEDM Tech. Dig.
, pp. 1080-1082
-
-
Lin, Y.-H.1
Chien, C.-H.2
Lin, C.-T.3
Chen, C.-W.4
Chang, C.-Y.5
Lei, T.-F.6
-
21
-
-
21644433491
-
"A novel 2-bit/cell nitride storage Flash memory with greater than 1 M P/E-cycle endurance"
-
Y. H. Shih, H. T. Lue, K. Y. Hsieh, R. Liu, and C. Y. Lu, "A novel 2-bit/cell nitride storage Flash memory with greater than 1 M P/E-cycle endurance," in IEDM Tech. Dig., 2004, pp. 881-884.
-
(2004)
IEDM Tech. Dig.
, pp. 881-884
-
-
Shih, Y.H.1
Lue, H.T.2
Hsieh, K.Y.3
Liu, R.4
Lu, C.Y.5
-
22
-
-
0032049286
-
"Differentiation of effects due to grain and grain boundary traps in laser annealed poly-Si thin film transistors"
-
Apr
-
G. A. Armstrong, S. Uppal, S. D. Brotherton, and J. R. Ayres, "Differentiation of effects due to grain and grain boundary traps in laser annealed poly-Si thin film transistors," Jpn. J Appl Phys., vol. 37, no. 4A, pp. 1721-1726, Apr. 1998.
-
(1998)
Jpn. J Appl Phys.
, vol.37
, Issue.4 A
, pp. 1721-1726
-
-
Armstrong, G.A.1
Uppal, S.2
Brotherton, S.D.3
Ayres, J.R.4
-
23
-
-
0027591006
-
"Physical models for degradation effects in polysilicon thin-film transistors"
-
May
-
M. Hack, A. G. Lewis, and I.-W. Wu, "Physical models for degradation effects in polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 40, no. 5, pp. 890-897, May 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, Issue.5
, pp. 890-897
-
-
Hack, M.1
Lewis, A.G.2
Wu, I.-W.3
-
24
-
-
33645732441
-
2 nanocrystal nonvolatile Flash memory"
-
Apr
-
2 nanocrystal nonvolatile Flash memory," IEEE Trans. Electron Devices, vol. 49, no. 4, pp. 782-789, Apr. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.49
, Issue.4
, pp. 782-789
-
-
Lin, Y.-H.1
Chien, C.-H.2
Lin, C.-T.3
Chang, C.-Y.4
Lei, T.-F.5
|