A novel 2-bit/cell nitride storage flash memory with greater than 1M P/E-cycle endurance

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 881-884

  Shih, Yen Hao ^a   Lue, Hang Ting ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRONS; GATES (TRANSISTOR); HOLE TRAPS; MICROPROCESSOR CHIPS; NITRIDES; ROM; HOT ELECTRONS;

2-BIT/CELL NITRIDE STORAGE FLASH MEMORY; ELECTRON INJECTION; GATE INJECTION; SPATIAL DISTRIBUTIONS;

FLASH MEMORY;

2-BIT/CELL NITRIDE STORAGE FLASH MEMORY; CHANNEL HOT ELECTRON PROGRAMMING; DATA-RETENTION; FOWLER-NORDHEIM; HIGH VOLTAGE DEVICES; HOT HOLES ERASE; MEMORY USE; NEW HIGH; NITRIDE-STORAGE FLASH MEMORY; OPERATION WINDOW;

EID: 21644433491     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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