-
1
-
-
0031139624
-
The flowering of flat displays
-
May
-
K. Werner, "The flowering of flat displays," IEEE Spectrum, vol. 34, pp. 40-49, May 1997.
-
(1997)
IEEE Spectrum
, vol.34
, pp. 40-49
-
-
Werner, K.1
-
2
-
-
4043056998
-
Short channel poly-Si TFTs
-
Japan
-
S. D. Brotherton, S. G. LEE, C. Glasse, J. R. Ayres, and C. Glaister, "Short channel poly-Si TFTs," in Proc. IDW, Hiroshima, Japan, 2002, pp. 283-286.
-
(2002)
Proc. IDW, Hiroshima
, pp. 283-286
-
-
Brotherton, S.D.1
Lee, S.G.2
Glasse, C.3
Ayres, J.R.4
Glaister, C.5
-
3
-
-
0035716646
-
High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization
-
A. Hara, Y. Mishima, T. Kakehi, F. Takeuchi, M. Takei, K. Yoshino, K. Suga, M. Chida, and N. Sasaki, "High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization," in IEDM Tech. Dig., 2001, pp. 747-750.
-
(2001)
IEDM Tech. Dig.
, pp. 747-750
-
-
Hara, A.1
Mishima, Y.2
Kakehi, T.3
Takeuchi, F.4
Takei, M.5
Yoshino, K.6
Suga, K.7
Chida, M.8
Sasaki, N.9
-
4
-
-
0022119783
-
Anomalous leakage current in LPCVD polysilicon MOSFETs
-
Sept
-
J. G. Fossum, A. O. Conde, H. Shichijo, and S. K. Banerjee, "Anomalous leakage current in LPCVD polysilicon MOSFETs," IEEE Trans. Electron Devices, vol. ED-32, pp. 1878-1884, Sept. 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 1878-1884
-
-
Fossum, J.G.1
Conde, A.O.2
Shichijo, H.3
Banerjee, S.K.4
-
5
-
-
84949077617
-
Leakage current mechanisms in hydrogen-passivated fine-grain polycrystalline silicon-on-insulator MOSFETs
-
Oct
-
S. K. Madan and D. A. Antoniadis, "Leakage current mechanisms in hydrogen-passivated fine-grain polycrystalline silicon-on-insulator MOSFETs," IEEE Trans. Electron Devices, vol. ED-33, pp. 1518-1528, Oct. 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 1518-1528
-
-
Madan, S.K.1
Antoniadis, D.A.2
-
6
-
-
0026998978
-
Inverted thin-film transistor with a simple self-aligned lightly doped drain structure
-
Dec
-
C. T. Liu, C. H. D. Yu, A. Kornblit, and K. H. Lee, "Inverted thin-film transistor with a simple self-aligned lightly doped drain structure," IEEE Trans. Electron Devices, vol. 39, pp. 2803-2809, Dec. 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 2803-2809
-
-
Liu, C.T.1
Yu, C.H.D.2
Kornblit, A.3
Lee, K.H.4
-
7
-
-
0027233212
-
A novel fabrication method for polycrystalline silicon thin-film transistors with a self-aligned lightly doped drain structure
-
Jan
-
K. Kobayashi, H. Murai, T. Sakamoto, K. Baert, H. Tokioka, T. Sugaware, Y. Masutani, H. Namizaki, and M. Nunoshita, "A novel fabrication method for polycrystalline silicon thin-film transistors with a self-aligned lightly doped drain structure," J. Appl. Phys., vol. 32, no. 1B, pp. 469-473, Jan. 1993.
-
(1993)
J. Appl. Phys.
, vol.32
, Issue.1 B
, pp. 469-473
-
-
Kobayashi, K.1
Murai, H.2
Sakamoto, T.3
Baert, K.4
Tokioka, H.5
Sugaware, T.6
Masutani, Y.7
Namizaki, H.8
Nunoshita, M.9
-
8
-
-
0034508134
-
Performance enhancement of offset gated polysilicon thin-film transistors
-
May
-
C. A. Dimitriadis and M. Miyasaka, "Performance enhancement of offset gated polysilicon thin-film transistors," IEEE Electron Device Lett., vol. 21, pp. 584-586, May 2000.
-
(2000)
IEEE Electron Device Lett.
, vol.21
, pp. 584-586
-
-
Dimitriadis, C.A.1
Miyasaka, M.2
-
9
-
-
0032634580
-
A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
-
Aug
-
P. S. Shih, C. Y. Chang, T. C. Chang, T. Y. Huang, D. Z. Peng, and C. F. Yeh, "A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition," IEEE Electron Device Lett., vol. 20, pp. 421-423, Aug. 2000.
-
(2000)
IEEE Electron Device Lett.
, vol.20
, pp. 421-423
-
-
Shih, P.S.1
Chang, C.Y.2
Chang, T.C.3
Huang, T.Y.4
Peng, D.Z.5
Yeh, C.F.6
-
10
-
-
0032595844
-
A self-aligned offset polysilicon thin-film transistor using photoresist reflow
-
Sept
-
J. I. Han and C. H. Han, "A self-aligned offset polysilicon thin-film transistor using photoresist reflow," IEEE Electron Device Lett., vol. 20, pp. 476-477, Sept. 2000.
-
(2000)
IEEE Electron Device Lett.
, vol.20
, pp. 476-477
-
-
Han, J.I.1
Han, C.H.2
-
11
-
-
0034452606
-
A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure
-
K. Ohgata, Y. Mishima, and N. Sasaki, "A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure," in IEDM Tech. Dig., 2000, pp. 205-208.
-
(2000)
IEDM Tech. Dig.
, pp. 205-208
-
-
Ohgata, K.1
Mishima, Y.2
Sasaki, N.3
-
12
-
-
0036503239
-
A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT
-
May
-
C. W. Lin, C. H. Tseng, T. K. Chang, C. W. Lin, W. T. Wang, and H. C. Cheng, "A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT," IEEE Electron Device Lett., vol. 23, pp. 133-135, May 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 133-135
-
-
Lin, C.W.1
Tseng, C.H.2
Chang, T.K.3
Lin, C.W.4
Wang, W.T.5
Cheng, H.C.6
-
13
-
-
0036051392
-
Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface
-
HI
-
R. Tsuchiya, K. Ohnishi, M. Horiuchi, S. Tsujikawa, Y. Shimamoto, N. Inada, J. Yugami, F. Ootsuka, and T. Onai, "Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface," in VLSI Tech. Symp. Dig., HI, 2002, pp. 150-151.
-
(2002)
VLSI Tech. Symp. Dig.
, pp. 150-151
-
-
Tsuchiya, R.1
Ohnishi, K.2
Horiuchi, M.3
Tsujikawa, S.4
Shimamoto, Y.5
Inada, N.6
Yugami, J.7
Ootsuka, F.8
Onai, T.9
-
14
-
-
1942520276
-
A novel self-aligned offset-gated polysilicon thin-film transistor using high-Κ dielectric spacers
-
Apr
-
Z. Xiong, H. Liu, C. Zhu, and J. K. O. Sin, "A novel self-aligned offset-gated polysilicon thin-film transistor using high-Κ dielectric spacers," IEEE Electron Device Lett., vol. 25, Apr. 2004.
-
(2004)
IEEE Electron Device Lett.
, vol.25
-
-
Xiong, Z.1
Liu, H.2
Zhu, C.3
Sin, J.K.O.4
-
15
-
-
4043126533
-
-
Version 20 001.4
-
MEDICI Users Manual, Version 20 001.4, 2001.
-
(2001)
MEDICI Users Manual
-
-
|