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Volumn 51, Issue 8, 2004, Pages 1304-1308

Characteristics of high-κ spacer offset-gated polysilicon TFTs

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; POLYSILICON; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 4043137371     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832720     Document Type: Article
Times cited : (33)

References (15)
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    • P. S. Shih, C. Y. Chang, T. C. Chang, T. Y. Huang, D. Z. Peng, and C. F. Yeh, "A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition," IEEE Electron Device Lett., vol. 20, pp. 421-423, Aug. 2000.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.