Data retention failure in NOR flash memory cells

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 57-60

  Lee, W H ^a   Lee, Dong Kyu ^a   Park, Young Min ^a   Kim, Keon Soo ^a   Ahn, Kun Ok ^a   Suh, Kang Deog ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Channel hot electron injection; Contamination; Dielectrics; EPROM; Flash memory cells; Logic arrays; Nonvolatile memory; Programmable logic arrays; Threshold voltage; Tunneling

Indexed keywords

ACTIVATION ENERGY; CELLS; CONTAMINATION; CYTOLOGY; DIELECTRIC MATERIALS; ELECTRON TUNNELING; METAL IONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTOR STORAGE; SILICON NITRIDE; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

CHANNEL HOT ELECTRON INJECTION; EPROM; FLASH MEMORY CELL; LOGIC ARRAYS; NON-VOLATILE MEMORY; PROGRAMMABLE LOGIC ARRAY;

FLASH MEMORY;

EID: 84949750269     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922882     Document Type: Conference Paper

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