High-endurance low-temperature polysilicon thin-film transistor EEPROM cell

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 304-306

  Oh, Jung Hoon ^a   Chung, Hoon Ju ^b   Lee, Nae In ^b   Han, Chul Hi ^b  

^a Hyundai MicroElectron Co Ltd   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON CYCLOTRON RESONANCE; POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

ELECTRONICALLY ERASEABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM);

PROM;

EID: 0033729015     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843158     Document Type: Article

References (5)

1. H. Oshima and S. Morozumi, "Feature trends for TFT integrated circuits on glass substrates," in IEDM Tech. Dig., 1989, p. 157.
2. N. D. Young et al., "The fabrication and characterization of EEPROM arrays on glass using a low-temperature poly-si TFT Process," IEEE Trans. Electron Devices, vol. 43, p. 1930, 1996.
3. M. Cao, T. Zhao, K. C. Saraswat, and J. D. Plummer, "A simple EEPROM cell using twin polysilicon thin film transistor," IEEE Electron Device Lett., vol. 15, p. 304, 1994.
4. S. Koyama, "A noble cell structure for Giga-bit EPROM's and flash memories using polysilicon thin film transistors," in VLSI Tech. Dig., 1992, p. 44.
5. N. I. Lee et al., "Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma," IEEE Electron Device Lett., vol. 18, p. 486, 1997.