Stability of cavities formed by He+ implantation in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 298-303

  Roqueta, F ^a,b   Grob, A ^a   Grob, J J ^a   Jerisian R ^b   Stoquert, J P ^a   Ventura, L ^b  

^a Faculté de Médecine   (France)

^b LMP   (France)

Author keywords

Defects; Gettering; Ion implantation; Voids

Indexed keywords

DISLOCATIONS (CRYSTALS); HELIUM; PROTONS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CAVITIES; CHANNELING ANALYSIS; FURNACE ANNEALING; SELF INTERSTITIALS;

ION IMPLANTATION;

EID: 0032715106     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00538-2     Document Type: Article

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