HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 256, Issue 1, 2007, Pages 281-287

  Sathish, N ^a   Dhamodaran, S ^a   Pathak, A P ^a   Ghanashyam Krishna, M ^a   Khan, S A ^b   Avasthi, D K ^b   Pandey, A ^c   Muralidharan, R ^c   Li, G ^d   Jagadish, C ^e  

^a UNIVERSITY OF HYDERABAD   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c SOLID STATE PHYSICS LABORATORY   (India)

^d Ledex Corporation   (Taiwan)

^e AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

AFM; HRXRD; Ion irradiation; Optical and GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL LAYERS; GALLIUM NITRIDE; ION BOMBARDMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION;

HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD); IRRADIATION INDUCED-DAMAGES; RESIDUAL STRAIN;

HEAVY IONS;

EID: 33947200302     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.060     Document Type: Article

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