Study of deep level defects in n-GaN by the optical transmission method

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 43-45

  Balagurov, L ^a   Chong, P J ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CURVE FITTING; DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; ELECTRONS; LIGHT TRANSMISSION; PHOTOEMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS;

DEEP LEVEL DEFECTS; DONOR ACCEPTOR RECOMBINATION; GALLIUM NITRIDE; OPTICAL THRESHOLD ENERGY; PHOTON ENERGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029770872     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116750     Document Type: Article

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