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Volumn 92, Issue 10, 2002, Pages 5740-5744

Model for electrical isolation of GaN by light-ion bombardment

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPANTS; DEFECT INTERACTIONS; ELECTRICAL ISOLATION; EXPERIMENTAL DATA; FREE CARRIERS; QUASI-CHEMICAL; SHALLOW DONORS;

ION BOMBARDMENT; POINT DEFECTS;

GALLIUM NITRIDE;

EID: 0037113065 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1512690 Document Type: Article

Times cited : (24)

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