Rutherford backscattering analysis of GaN decomposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 3, 2003, Pages 1080-1083

  Choi, H W ^a   Cheong, M G ^b   Rana, M A ^a   Chua, S J ^a,c   Osipowicz, T ^a   Pan, J S ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DECOMPOSITION; INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMODYNAMIC STABILITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

MICROPROBES;

GALLIUM NITRIDE;

EID: 0038794644     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1577570     Document Type: Article

References (8)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998).
2. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 2 31, L139 (1992).
3. H. W. Choi, S. J. Chua, A. Ramam, J. S. Pan, and A. T. S. Wee, Appl. Phys. Lett. 77, 1795 (2000).
4. A. P. Zhang, B. Luo, J. W. Johnson, F. Ren, J. Han, and S. J. Pearton, Appl. Phys. Lett. 79, 3636 (2001).
5. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 81, 1 (1999).
6. M. Kuball, F. Demangeot, J. Frandon, M. A. Renucci, J. Massies, N. Grandjean, R. L. Aulombard, and O. Briot, Appl. Phys. Lett. 73, 960 (1998).
7. M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto, and A. Koukitu, Proceedings of the International Workshop on Nitride Semiconductors, Japan, 2000, pp. 38-41.
8. D. D. Koleske, A. E. Wickenden, R. L. Henry, J. C. Culbertson, and M. E. Twigg, J. Cryst. Growth 223, 466 (2001).