Electrical isolation of GaN by MeV ion irradiation

Applied Physics Letters

Volumn 78, Issue 7, 2001, Pages 943-945

  Boudinov, H ^a,c   Kucheyev, S O ^a   Williams, J S ^a   Jagadish, C ^a   Li, G ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Ledex Corporation   (Taiwan)

^c FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001699607     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1348306     Document Type: Article

References (11)

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10. -2s-1 for O ions) to keep the damage generation rate constant for irradiation with different species to suppress the influence of a possible dose rate effect.
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