Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

Applied Physics Letters

Volumn 74, Issue 9, 1999, Pages 1242-1244

  Strittmatter, A ^a   Krost, A ^a   Strassburg M ^a   Turck V ^a   Bimberg, D ^a   Blasing J ^b   Christen, J ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001181453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123512     Document Type: Article

References (10)

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