Growth of InN films and nanorods by H-MOVPE

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 37, Issue 1-2, 2007, Pages 142-147

  Park, Hyun Jong ^a   Kryliouk, Olga ^a   Anderson, Tim ^a   Khokhlov, Dmitry ^b   Burbaev, Timur ^c  

^a University of Florida   (United States)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

Bandgap; Equilibrium calculation; Films; H MOVPE; Indium nitride; InN; Morphology; Nanorods; Photoluminescence; Thermodynamics

Indexed keywords

ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; NANORODS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

EQUILIBRIUM CALCULATION; H-MOVPE; INDIUM NITRIDE;

FILM GROWTH;

EID: 33947104584     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.06.022     Document Type: Article

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