Gas source molecular beam epitaxy growth of GaN on C-, A-, R, and M-plane sapphire and silica glass substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6 A, 1997, Pages

  Iwata, Kakuya ^a   Asahi, Hajime ^a   Asahi, Kumiko ^a   Kuroiwa, Reiko ^a   Gonda, Shun ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CARRIER CONCENTRATION; ELECTRON CYCLOTRON RESONANCE; EXCITONS; FUSED SILICA; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031170545     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l661     Document Type: Article

References (14)