Origin of surface reflectance spectrum during epitaxy

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 544-549

  Kobayashi, Naoki ^a   Kobayashi, Yasuyuki ^a   Uwai, Kunihiko ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Group V dimer; III V materials; SPA

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; ELECTRON ENERGY LEVELS; LATTICE CONSTANTS; MATHEMATICAL MODELS; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PROPERTIES; SURFACE STRUCTURE; SURFACE TREATMENT;

DIMERS; HARRISON MODEL; SEMICONDUCTING INDIUM ARSENIDE; SURFACE PHOTOABSORPTION SPECTROSCOPY (SPA); SURFACE REFLECTANCE SPECTRUM;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0031547284     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00033-X     Document Type: Article

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