RDS characterization of GaAsSb and GaSb grown by MOVPE

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 249-253

  Pitts, O J ^a   Watkins, Simon P ^a   Wang, C X ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

A1. Doping; A1. Optical spectroscopy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

ELECTROOPTICAL EFFECTS; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

LINEAR ELECTRO-OPTIC (LEO) EFFECT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037291581     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01892-4     Document Type: Conference Paper

References (12)

1. Bolognesi C.R., Dvorak M.W., Matine N., Pitts O.J., Watkins S.P. Japan. J. Appl. Phys. 41:2002;1131.
2. Watkins S.P., Pitts O.J., Dale C., Xu X.G., Dvorak M.W., Matine N., Bolognesi C.R. J. Crystal Growth. 221:2000;59.
3. Serries D., Peter M., Herres N., Winkler K., Wagner J. J. Appl. Phys. 87:2000;8522.
4. Goletti C., Resch-Esser U., Foeller J., Esser N., Richter W., Brar B., Kroemer H. Surf. Sci. 352-354:1996;771.
5. Wiersma R., Stotz J.A.H., Pitts O.J., Wang C.X., Thewalt M.L.W., Watkins S.P. J. Electron. Mater. 30:2001;1429.
6. Kamiya I., Aspnes D.E., Florez L.T., Harbison J.P. Phys. Rev. B. 46:1992;15894.
7. Aspnes D.E., Kamiya I., Tanaka H., Bhat R. J. Vac. Sci. Technol. B. 10(4):1992;1725.
8. Pitts O.J., Watkins S.P., Wang C.X., Stotz J.A.H., Thewalt M.L.W. J. Electron. Mater. 30:2001;1412.
9. O.J. Pitts, S.P. Watkins, C.X. Wang, V. Fink, K.L. Kavanagh, submitted to Phys. Rev. B.
10. Acosta-Ortiz S.E., Lastras-Martinez A. Phys. Rev. B. 40:1989;1426.
11. Tanaka H., Colas E., Kamiya I., Aspnes D.E., Bhat R. Appl. Phys. Lett. 59:1991;3443.
12. Zollner S., Garriga M., Humlíček J., Gopalan S., Cardona M. Phys. Rev. B. 43(5):1991;4349.