Engineered barriers with hafnium oxide for nonvolatile application

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2418-2422

  Irrera, Fernanda ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

Barrier engineering; Hafnium oxide (HfO2); Low voltage applications; Nonvolatile memories (NVMs)

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; TEMPERATURE MEASUREMENT;

BARRIER ENGINEERING; LOW-VOLTAGE APPLICATIONS; NONVOLATILE MEMORIES (NVM);

HAFNIUM COMPOUNDS;

EID: 33847369104     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.879675     Document Type: Article

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