Enhanced injection in n -poly/SiO/SiC/p-Sub MOS capacitors for low-voltage nonvolatile memory applications: experiment

IEEE Transactions on Electron Devices

Volumn 46, Issue 12, 1999, Pages 2315-2322

  Irrera, Fernanda ^a,b   Russo, Felice ^a,c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b TEXAS INSTRUMENTS   (United States)

^c MICRON TECHNOLOGY INC   (United States)

Author keywords

Charge injection; Mos devices; Nonvolatile memory; Semiconductor device reliability; Stress measurements; Tunneling

Indexed keywords

ELECTRON TUNNELING; NONVOLATILE STORAGE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; STRESS ANALYSIS;

SEMICONDUCTOR DEVICE RELIABILITY;

MOS CAPACITORS;

EID: 0033317034     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.808071     Document Type: Article

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