Multilayer tunneling barriers for nonvolatile memory applications

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 153-154

  Blomme, P ^a,b   Govoreanu, B ^a,b   Rosmeulen, M ^a,b   Van Houdt, J ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Capacitors; Dielectric constant; EPROM; High K dielectric materials; Lead compounds; Low voltage; Nonhomogeneous media; Nonvolatile memory; Testing; Tunneling

Indexed keywords

CAPACITORS; ELECTRON TUNNELING; LEAD COMPOUNDS; MATERIALS TESTING; NONVOLATILE STORAGE; PERMITTIVITY; TESTING;

EPROM; HIGH-K DIELECTRIC MATERIALS; LOW VOLTAGES; NON-VOLATILE MEMORY; NONHOMOGENEOUS MEDIA;

DIELECTRIC MATERIALS;

EID: 84948649638     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029569     Document Type: Conference Paper

References (6)

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5. P. Blomme, B. Govoreanu and M. Rosmeulen US patent pending
6. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000).