SCOPUS 정보 검색 플랫폼

Volumn 84, Issue 15, 2004, Pages 2868-2870

Phosphorus ion implantation and POCI3 doping effects of n +-polycrystalline-silicon/high-k gate dielectric (HfO2 and AI2O3) films

(6) Lee, Chihoon a Choi, Jihoon a Cho, Moonju a Jeong, Doo Seok a Hwang, Cheol Seong a Kim, Hyeong Joon a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; CRYSTALLIZATION; DOPING (ADDITIVES); GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); ION IMPLANTATION; MOS CAPACITORS; PHOSPHORUS; POLYSILICON; VOLTAGE CONTROL;

AMORPHOUS INTERFACE; DOPING EFFECTS; GATE DIELECTRICS;

DIELECTRIC FILMS;

EID: 2342622740 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1697646 Document Type: Article

Times cited : (4)

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