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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 11 B, 2002, Pages

Growth of high-quality epitaxial InN film with high-speed reactant gas by organometallic vapor-phase epitaxy

(5) Yang, Fu Hsiang b Hwang, Jih Sheng a Yang, Ying Jay b Chen, Kuei Hsien a Wang, Jih Hsiang b

a ACADEMIA SINICA (Taiwan)

b NONE

Author keywords

GaN; InN; NH3; OMVPE; Stagnant layer

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FILM GROWTH; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

HIGH-SPEED REACTANT GASES;

SEMICONDUCTING FILMS;

EID: 0037113688 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l1321 Document Type: Article

Times cited : (22)

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