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Applied Physics A: Materials Science and Processing

Volumn 68, Issue 5, 1999, Pages 593-596

Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

(9) Shen, B a Zhou, Y G a Chen, Z Z a Chen, P a Zhang, R a Shi, Y a Zheng, Y D a Tong, W b Park, W b

a NANJING UNIVERSITY (China)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; EPITAXIAL GROWTH; LIGHT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RADIATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION;

BAND EDGE EMISSION; HALL MEASUREMENT; HALL MOBILITY; LIGHT RADIATION HEATING; PHOTOLUMINESCENCE SPECTRUM;

SEMICONDUCTING FILMS;

EID: 0032627111 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050946 Document Type: Article

Times cited : (41)

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