Doping level-dependent dry-etch damage in n-type GaN

Journal of Electroceramics

Volumn 17, Issue 2-4, 2006, Pages 227-230

  Lee, Ji Myon ^a   Kim, Byung Il ^a   Park, Seong Ju ^b  

^a Sunchon National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Damage; Etch; GaN; Plasma

Indexed keywords

CONTACT RESISTIVITY; DOPANT CONCENTRATION; DOPING LEVEL-DEPENDENT DRY-ETCH DAMAGE; OHMIC CONTACT;

DRY ETCHING; ELECTRIC RESISTANCE; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLIZING; SPUTTERING;

ELECTRIC FIELD EFFECTS;

EID: 33847193595     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-6990-0     Document Type: Conference Paper

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