High resolution reactive ion etching of GaN and etch-induced effects

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2759-2763

  Cheung, R ^a   Reeves, R J ^a   Rong, B ^a   Brown, S A ^a   Fakkeldij, E J M ^b   Van Der Drift, E ^b   Kamp, M ^c  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033265533     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591059     Document Type: Article

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