InGaN blue light-emitting diodes with optimized n-GaN layer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3621, Issue , 1999, Pages 28-36

  Eliashevich, Ivan ^a   Li, Yuxin ^a   Osinsky, Andrei ^a   Tran, Chuong A ^a   Brown, Michael C ^a   Karlicek Jr , Robert F ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONDESTRUCTIVE EXAMINATION; QUANTUM EFFICIENCY; RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

INDIUM GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0032670280     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)