Formation of Si nanodot arrays on the oxidized Si(1 0 0) surface

Applied Surface Science

Volumn 243, Issue 1-4, 2005, Pages 199-203

  Saranin, A A ^a   Zotov, A V ^a   Kotlyar, V G ^a   Utas, O A ^a   Ignatovich, K V ^a   Kasyanova, T V ^a   Park, Y S ^a   Park, W J ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Atom solid interactions; Oxygen; Scanning tunneling microscopy (STM); Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

MORPHOLOGY; OXIDATION; OXYGEN; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TOPOGRAPHY; SURFACES;

ATOMIC-SOLID INTERACTIONS; NANODOTS; NUMBER DENSITY; ULTRA-HIGH VACCUM (UHV);

ARRAYS;

EID: 14544277987     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.063     Document Type: Article

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